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# Hot-electron effects in MOSFETs

@article{Hu1983HotelectronEI, title={Hot-electron effects in MOSFETs}, author={Chenming Calvin Hu}, journal={1983 International Electron Devices Meeting}, year={1983}, pages={176-181} }

- Published 1983 in 1983 International Electron Devices Meeting

The physics of several hot-electron currents and their impact on IC performance and reliability is reviewed,<tex>V_{d} - V_{dsat}</tex>is emphasized as the driving force of all hot-electron effects.<tex>V_{g}, V_{sub}</tex>, and<tex>L</tex>affect the hot-electron effects only through their influence on V<inf>dsat</inf>. A simple hot-electron sealing rule is to scale<tex>V_{d}, V_{t}</tex>, and<tex>\sqrt{x_{ox}x_{j}}</tex>in proportion to<tex>L</tex>. Several proposed structural changes should… CONTINUE READING

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