Hot-carrier reliability of MOSFETs at room and cryogenic temperature

@inproceedings{Kim1999HotcarrierRO,
  title={Hot-carrier reliability of MOSFETs at room and cryogenic temperature},
  author={SeokWon Abraham Kim},
  year={1999}
}

Citations

Publications citing this paper.

References

Publications referenced by this paper.
Showing 1-10 of 53 references

Fast Timing Simulation for Submicron HotCarrier Degradation," International Reliability

  • W. Sun, E. Rosenbaum, S. Kang
  • Physics Symposium Proceeding,
  • 1995

Oxide-Field Dependence of NMOS HotCarrier Degradation Rate and Its Impact on AC-Lifetime Prediction,

  • S. Kim, B. Menberu, J. Chung
  • International Electron Devices Meeting,
  • 1995

Oxide-Field Dependence of the NMOS HotCarrier Degradation Rate and Its Impact on AC-Lifetime Prediction,

  • S. Kim, B. Menberu, J. Chung
  • International Electron Devices Meeting,
  • 1995

Parameter Extraction Guidelines for Hot-Electron Reliability Simulation,

  • V. Chan, S. Kim, J. E. Chung
  • International Reliability Physics Symposium,
  • 1993

Threshold Voltage Model for Deep-Submicrometer MOSFETs,

  • Zhi-Hong Liu, Chenming Hu, +4 authors Y. C. Cheng
  • IEEE Transactions on Electron Devices,
  • 1993

DIBL in Short-Channel NMOS Devices at 77K,

  • M. Deen, Z. Yan
  • IEEE Transactions on Electron Devices,
  • 1992

Hot-ElectronInduced Input Offset Voltage Degradation in CMOS Differential Amplifiers,

  • S. Mohamedi, V. Chan, J. Park, F. Nouri, -B. Scharf, J. Chung
  • IEEE International Reliability Physics Symposium,
  • 1992

Low Temperature MOSFET Operation by the Temperature

  • Michio okoyama, Tetsuya Hidaka, You-Wen Yi, Kazuya Masu, Kazuo Tsubouchi
  • Scaling Theory," International Conference on…
  • 1992

Similar Papers

Loading similar papers…