Hot-carrier-induced time dependent dielectric breakdown in high voltage pMOSFETs

  title={Hot-carrier-induced time dependent dielectric breakdown in high voltage pMOSFETs},
  author={F. Alagi},
  journal={Microelectronics Reliability},
0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.03.036 E-mail address: We report about the time dependent gate dielectric breakdown failure of high voltage p-channel MOSFETs submitted to hot-carrier stress. We consider the time integral of the instantaneous gate current raised to a constant exponent as a measure of the dielectric film wear out, and we check that this integral computed up to the dielectric failure time is indeed a constant not… CONTINUE READING

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