Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory.

  title={Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory.},
  author={Yiming Yang and Xingyue Peng and Hong-Seok Kim and Taeho Kim and Sanghun Jeon and Hang Kyu Kang and W. Choi and Jindong Song and Yong-Joo Doh and Dong Yu},
  journal={Nano letters},
  volume={15 9},
We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal… Expand
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Effect of substrate on photo-induced persistent photoconductivity in InAs nanowires
  • Taeok Kim, Sungjin Park, +4 authors Mann-Ho Cho
  • Materials Science
  • Applied Surface Science
  • 2018
Abstract The thermal conduction by the difference in the substrate of InAs nanowires (NWs) was investigated by determining the local temperature using Raman spectroscopy as an optical method. TheExpand
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This work investigates the thermalization properties of photogenerated carriers by continuous-wave (cw) photoluminescence (PL) in InP and GaAs NWs and finds that the mismatch between carrier and lattice temperature, ΔT, increases exponentially with lattices temperature and depends inversely on the NW diameter. Expand
Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire.
  • Y. Han, M. Fu, +6 authors Qing Chen
  • Materials Science, Medicine
  • ACS applied materials & interfaces
  • 2017
Through removing the native oxide layer and passivating the nanowire with HfO2, the NPC effect is eliminated and intrinsic photoelectric response in InAs nanowires is realized. Expand


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