Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory.

@article{Yang2015HotCT,
  title={Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory.},
  author={Yiming Yang and Xingyue Peng and Hong-Seok Kim and Taeho Kim and Sanghun Jeon and Hang Kyu Kang and W. Choi and Jindong Song and Yong-Joo Doh and Dong Yu},
  journal={Nano letters},
  year={2015},
  volume={15 9},
  pages={
          5875-82
        }
}
We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal… Expand
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TLDR
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  • Materials Science, Medicine
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TLDR
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