Hot Carrier–Assisted Intrinsic Photoresponse in Graphene

@article{Gabor2011HotCI,
  title={Hot Carrier–Assisted Intrinsic Photoresponse in Graphene},
  author={N. Gabor and J. C. Song and Q. Ma and N. Nair and T. Taychatanapat and K. Watanabe and T. Taniguchi and L. Levitov and P. Jarillo-Herrero},
  journal={Science},
  year={2011},
  volume={334},
  pages={648 - 652}
}
Photoexcited electrons in graphene remain thermally excited because they cannot transfer this energy to lattice vibrations. We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density… Expand
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