Hopping Auger recombination at negative U centres in amorphous semiconductors

@inproceedings{Savransky1992HoppingAR,
  title={Hopping Auger recombination at negative U centres in amorphous semiconductors},
  author={Semen D. Savransky},
  year={1992}
}
Abstract It is shown that Auger processes at negative U centres may be one of the efficient possible channels for recombination in chalcogenide amorphous semiconductors (CASs). Estimations of the hopping Auger recombination (AR) probability of the ex- charge carriers at the negative U centres are performed. At moderately low temperatures, hopping AR is probably the cause of the photoconductivity observed in CASs. 

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