Homogeneity study of wafers of InP single crystal grown from P-rich melt

@article{Zhou2005HomogeneitySO,
  title={Homogeneity study of wafers of InP single crystal grown from P-rich melt},
  author={Xiaolong Zhou and Luhong Mao and Niefeng Sun and Weilian Guo and Xiawan Wu and Jiande Fu and Zhihong Yao and Yanun Zhao and Kewu Yang and Tongnian Sun},
  journal={13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004.},
  year={2005},
  pages={23-26}
}
A 4-inch InP single crystal has been grown from P-rich melt by the P-injection synthesis LEC method. Due to the non-stoichiometric condition, there are many pores in the tail of the ingot. The wafers cut from it are experimented by means of PL mapping and EPD mapping. The PL peak intensity standard deviation of the 4-inch InP wafer is higher. The EPDs… CONTINUE READING