Hole mobility increase in ultra-narrow Si channels under strong (110) surface confinement

@article{Neophytou2011HoleMI,
  title={Hole mobility increase in ultra-narrow Si channels under strong (110) surface confinement},
  author={Neophytos Neophytou and Hans Kosina},
  journal={Applied Physics Letters},
  year={2011},
  volume={99},
  pages={092110}
}
We report on the hole mobility of ultra-narrow [110] Si channels as a function of the confinement length scale. We employed atomistic bandstructure calculations and linearized Boltzmann transport approach. The phonon-limited mobility of holes in thin [110] channels can be improved by more than 3 × as the thickness of the (110) confining surface is reduced down to 3 nm. This behavior originates from confinement induced bandstructure changes that decrease the hole effective mass and the… 

Figures from this paper

Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation

We investigate the effect of confinement and orientation on the phonon transport properties of ultra-thin silicon layers of thicknesses between 1 nm-16 nm. We employ the modified valence force field

Channel Material Dependence of Wave Function Deformation Scattering in Ultrascaled FinFETs

We investigate the channel material dependence of wave function deformation scattering (WDS), a phenomenon that occurs when the shape of the carrier wave function is forced to change as the channel

A Simple Interpolation Model for the Carrier Mobility in Trigate and Gate-All-Around Silicon NWFETs

We compute the electron and hole mobilities in Trigate and gate-all-around silicon nanowires (SiNWs) within the nonequilibrium Green’s Function framework. We then derive a simple model for the

Atomistic calculations of the electronic, thermal, and thermoelectric properties of ultra-thin Si layers

Low-dimensional semiconductors are considered promising candidates for thermoelectric applications with enhanced performance because of a drastic reduction in their thermal conductivity, κl, and

Observation of layered antiferromagnetism in self-assembled parallel NiSi nanowire arrays on Si(110) by spin-polarized scanning tunneling spectromicroscopy

An endotaxial heterostructure of parallel magnetic NiSi NW arrays with a layered antiferromagnetic ordering in Si(110) provides a new and important perspective for the development of novel Si-based spintronic nanodevices.

Template-directed atomically precise self-organization of perfectly ordered parallel cerium silicide nanowire arrays on Si(110)-16 × 2 surfaces

The atomic-resolution dual-polarity STM images reveal that the interchain coupling leads to the formation of the registry-aligned chain bundles within individual Ce silicide nanowire, a promising route to produce parallel Nanowire arrays in a straightforward, low-cost, high-throughput process.

Physical transport simulation for path-finding and device optimization

We present a novel simulation approach for transport modeling in nano-scaled devices. It is based on the solution of the Boltzmann transport equation (BTE) in phase space using a k·p-based electronic

References

SHOWING 1-10 OF 20 REFERENCES

Hole Mobility in Ultrathin Double-Gate SOI Devices: The Effect of Acoustic Phonon Confinement

We show that the effect of phonon confinement in ultrathin double-gate silicon-on-insulator (DGSOI) transistors on hole mobility is weaker than that predicted for electron mobility. To do so,

Significant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon.

It is shown that acoustic phonon limited hole mobility in [110] grown silicon nanowires (SiNWs) is greater than electron mobility, which strongly suggest that these SiNWs may be useful in future electronics.

Hole Mobility Characteristics in Si Nanowire pMOSFETs on (110) Silicon-on-Insulator

In this letter, hole mobility characteristics in Si gate-all-around nanowires on (110)-oriented silicon-on-insulator substrate have been studied, based on the advanced split C-V method. Fabricated

Subband Engineering for p-type Silicon Ultra-Thin Layers for Increased Carrier Velocities: An Atomistic Analysis

Ultra-thin-body (UTB) channel materials of a few nanometers in thickness are currently considered as candidates for future electronic, thermoelectric, and optoelectronic applications. Among the

Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistors

We demonstrate that carrier scattering induced by the thickness fluctuation of a silicon-on-insulator (SOI) film reduces electron mobility in ultrathin-body metal–oxide–semiconductor field-effect

Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering

The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering

Effects of confinement and orientation on the thermoelectric power factor of silicon nanowires

It is suggested that low dimensionality can improve the thermoelectric (TE) power factor of a device, offering an enhancement of the ZT figure of merit. In this work the atomistic

Quantum confinement induced performance enhancement in sub-5-nm lithographic Si nanowire transistors.

This study suggests simple (no additional doping) FETs using tiny top-down nanowires can deliver high performance for potential impact on both CMOS scaling and emerging applications such as biosensing.

Experimental study on superior mobility in [110]-oriented UTB SOI pMOSFETs

The superior mobility in [110]-oriented ultrathin body (UTB) pMOSFETs with silicon-on-insulator (SOI) thickness (t/sub SOI/) ranging from 32 down to 2.3 nm is experimentally examined for the first