Hole mobility increase in ultra-narrow Si channels under strong (110) surface confinement

@article{Neophytou2011HoleMI,
  title={Hole mobility increase in ultra-narrow Si channels under strong (110) surface confinement},
  author={Neophytos Neophytou and Hans Kosina},
  journal={Applied Physics Letters},
  year={2011},
  volume={99},
  pages={092110}
}
We report on the hole mobility of ultra-narrow [110] Si channels as a function of the confinement length scale. We employed atomistic bandstructure calculations and linearized Boltzmann transport approach. The phonon-limited mobility of holes in thin [110] channels can be improved by more than 3 × as the thickness of the (110) confining surface is reduced down to 3 nm. This behavior originates from confinement induced bandstructure changes that decrease the hole effective mass and the… 
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