Hole-doped room-temperature superconductivity in H3S1-xZ (Z=C, Si)

@article{Ge2020HoledopedRS,
  title={Hole-doped room-temperature superconductivity in H3S1-xZ (Z=C, Si)},
  author={Yanfeng Ge and Fan Zhang and Ranga P. Dias and Russell J. Hemley and Yugui Yao},
  journal={arXiv: Superconductivity},
  year={2020}
}
We examine the effects of the partial substitution of S atoms by C and Si atoms on the superconductivity of H$_3$S with the $Im\bar{3}m$ structure at megabar pressure. The low-level substitution can fine-tune the Fermi energy to reach the electronic density-of-states peak maximizing the electron-phonon coupling. This can boost the critical temperature from the original 203 K to 289 K and 283 K, respectively, for H$_3$S$_{0.962}$C$_{0.038}$ at 260 GPa and H$_3$S$_{0.960}$Si$_{0.040}$ at 230 GPa… 

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