Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells.

Abstract

By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs(2)CO(3) to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells.

DOI: 10.1002/adma.201104945

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Cite this paper

@article{Liu2012HoleAE, title={Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells.}, author={Jun Liu and Yuhua Xue and Yunxiang Gao and Dingshan Yu and Michael Frederick Durstock and Liming Dai}, journal={Advanced materials}, year={2012}, volume={24 17}, pages={2228-33} }