History of Semiconductor Research

@article{Pearson1955HistoryOS,
  title={History of Semiconductor Research},
  author={Gerald L. Pearson and Walter Houser Brattain},
  journal={Proceedings of the IRE},
  year={1955},
  volume={43},
  pages={1794-1806}
}
This paper presents a running story of semiconductor research from its earliest beginnings up to the present day, with special emphasis on the inception of new ideas and the resolution of older discrepancies. At several points in the story; short interludes are taken to fill in the status as of that time. Semiconductor research began quite inconspicuously about 120 years ago with some observations on the electrical properties of silver suphide. Progress was very slow for the next 50 years and… 
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References

SHOWING 1-10 OF 73 REFERENCES
A new electronic rectifier
A new rectifier utilizing a partially oxidized disk of copper as a rectifier unit is described. The disks may be arranged into groups suitable for all fields of rectifier applications. The
Thyrite A New Material for Lightning Arresters
  • K. B. Mceachron
  • Physics
    Transactions of the American Institute of Electrical Engineers
  • 1930
A new material has been developed which is peculiarly adapted for use in lightning arresters. It is physically similar to dry process porcelain and it can be made in any shape that can be
Surface Properties of Semiconductors.
A New Type of Photoelectric Effect in Cuprous Oxide in a Magnetic Field
WHEN a plate immersed in liquid air and placed in a magnetic field parallel to its plane is illuminated by a beam of white light perpendicular to its plane, an electromotive force E is produced
The Magneto-Resistance Effect in Oriented Single Crystals of Germanium
This paper describes an extensive study of the magneto-resistance effect in germanium as a function of crystal orientation. Experimental measurements establish the constants involved in the
Transport properties of a many-valley semiconductor
The simple model of a semiconductor, based on a single effective mass for the charge carriers and a spherical shape for the surfaces of constant energy, is now known to be inadequate for most of the
Theory of relation between hole concentration and characteristics of germanium point contacts
The theory of the relation between the current-voltage characteristic of a metal-point contact to n-type germanium and the concentration of holes in the vicinity of the contact is discussed. It is
Theory of transient phenomena in the transport of holes in an excess semiconductor
An analysis is given of the transient behavior of the density of holes n h in an excess semiconductor as a function of lime t and of position x with respect to the electrode from which they are being
Silicon P-N Junction Alloy Diodes
A new type of p-n junction silicon diode has been prepared by alloying acceptor or donor impurities with n- or p-type silicon. The unique features of this diode are: (a) reverse currents as low as
...
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