Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films.

@article{Ha2015HighlyUA,
  title={Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films.},
  author={Tae-Jun Ha and Kevin I. Chen and Steven Chuang and Kin Man Yu and Daisuke Kiriya and Ali Javey},
  journal={Nano letters},
  year={2015},
  volume={15 1},
  pages={392-7}
}
Air-stable n-doping of carbon nanotubes is presented by utilizing SiN(x) thin films deposited by plasma-enhanced chemical vapor deposition. The fixed positive charges in SiN(x), arising from (+)Si ≡ N3 dangling bonds induce strong field-effect doping of underlying nanotubes. Specifically, an electron doping density of ∼ 10(20) cm(-3) is estimated from capacitance voltage measurements of the fixed charge within the SiN(x). This high doping concentration results in thinning of the Schottky… CONTINUE READING
Highly Cited
This paper has 19 citations. REVIEW CITATIONS

Citations

Publications citing this paper.
Showing 1-10 of 14 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 20 references

Jpn. J. Appl. Phys

  • T Yasunishi, S Kishimoto, Y Ohno
  • Jpn. J. Appl. Phys
  • 2014

Nanoscale

  • J Ding, Z Li, +10 authors P R L Malenfant
  • Nanoscale
  • 2014

J. Am. Chem. Soc. Chem. Soc. Rev

  • D Kiriya, K Chen, +8 authors T Takahashi
  • J. Am. Chem. Soc. Chem. Soc. Rev
  • 2013

Javey, A. Nat. Mater

  • C Wang, D Hwang, +4 authors B Ma
  • Javey, A. Nat. Mater
  • 2013

Nano Res

  • S Liang, Z Zhang, T Pei, R Li, Y Li, L Peng
  • Nano Res
  • 2013

Nature

  • M M Shulaker, G Hills, N Patil, H Wei
  • Nature
  • 2013

ACS Nano

  • J Zhang, C Wang, Y Fu, Y Che, C Zhou
  • ACS Nano
  • 2011

Photonics

  • L Yang, S Wang, +5 authors Nat
  • Photonics
  • 2011

J. Am. Chem. Soc

  • J Lee, I H Kim, +5 authors J.-Y Lee
  • J. Am. Chem. Soc
  • 2009

Appl. Phys. Lett. Jpn. J. Appl. Phys

  • C Wang, K Ryu, +10 authors K Matsumoto
  • Appl. Phys. Lett. Jpn. J. Appl. Phys
  • 2008

Similar Papers

Loading similar papers…