Highly-symmetric silicon dioxide shallow shell resonators with angstrom-level roughness

  title={Highly-symmetric silicon dioxide shallow shell resonators with angstrom-level roughness},
  author={Benoit Hamelin and Vahid Tavassoli and Farrokh Ayazi},
  journal={2015 IEEE SENSORS},
A highly-symmetric silicon dioxide shallow shell resonator with angstrom-level roughness (Ra=4.3Å) is presented. Curvature discontinuities in shallow shells, at a controlled distance from the base anchor of the shell, provide acoustic decoupling and significantly reduce the anchor contribution to the frequency split in degenerate wineglass modes as well as their damping. The Finite Element Method (FEM) simulations, performed in COMSOL 4.4, show increasing strain energy density at the vicinity… CONTINUE READING


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