Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

@article{Thomas2019HighlySA,
  title={Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots},
  author={Frederick S Thomas and Andreas Baumgartner and Lukas Gubser and Christian J{\"u}nger and Gergő F{\"u}l{\"o}p and Malin Nilsson and Francesca Rossi and Valentina Zannier and Lucia Sorba and Christian Schoenenberger},
  journal={Nanotechnology},
  year={2019},
  volume={31}
}
We present a comprehensive electrical characterization of an InAs/InP nanowire (NW) heterostructure, comprising of two InP barriers forming a quantum dot (QD), two adjacent lead segments and two metallic contacts. We demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade resonances over a large gate voltage range. By analyzing the resonance line shapes, we map the evolution of the tunnel couplings from the few to the many electron… 

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References

SHOWING 1-10 OF 52 REFERENCES

Quantum dots and tunnel barriers inInAs∕InPnanowire heterostructures: Electronic and optical properties

We compute the structural and electronic properties of 111 -oriented InAs / InP nanowire heterostructures using Keating’s valence force field and a tight-binding model. We focus on the optical

Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates

We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs

InAs/InP radial nanowire heterostructures as high electron mobility devices.

TLDR
The rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers opens up opportunities for fundamental and applied studies of quantum coherent transport and high-speed, low-power nanoelectronic circuits.

Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions.

TLDR
It is found that band-bending at ZB/WZ junctions can lead to bound electron states within an enclosed WZ segment of sufficient length, evidenced by the observation of Coulomb blockade at low temperature.

Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering

We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a

Growth dynamics of InAs/InP nanowire heterostructures by Au-assisted chemical beam epitaxy

TLDR
A strategy to control the growth rate and the dynamics of the barriers, by forcing the NP reconfiguration before starting the InP growth allows for the realized of InAs/InP NW heterostructures of different diameters, all having symmetric InP barriers with well controlled thickness, which are crucial parameters for the realization of advanced electronic quantum devices.

Resolving ambiguities in nanowire field-effect transistor characterization.

We have modeled InAs nanowires using finite element methods considering the actual device geometry, the semiconducting nature of the channel and surface states, providing a comprehensive picture of

Spectroscopy of the superconducting proximity effect in nanowires using integrated quantum dots

The superconducting proximity effect has recently attracted a renewed interest as the basis of topologically nontrivial states in materials with a large spin–orbit interaction, with protected

Thermoelectric Conversion at 30 K in InAs/InP Nanowire Quantum Dots.

TLDR
High-temperature thermoelectric conversion in InAs/InP nanowire quantum dots is demonstrated by taking advantage of their strong electronic confinement and investigating the evolution of the electronic figure of merit ZT as a function of the quantum dot configuration.

Few electron double quantum dots in InAs/InP nanowire heterostructures.

TLDR
The resonant current through the double dot is found to depend on the orbital coupling between states of different radial symmetry, and the charging energies are well described by a capacitance model if next-neighbor capacitances are taken into account.
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