Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6 plasma

@article{Hnl2018HighlySD,
  title={Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6 plasma},
  author={Simon H{\"o}nl and Herwig Hahn and Yannick Baumgartner and Lukas Czornomaz and Paul F. Seidler},
  journal={Journal of Physics D: Applied Physics},
  year={2018},
  volume={51}
}
We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (AlxGa1–xP). Utilizing mixtures of silicon tetrachloride (SiCl4) and sulfur hexafluoride (SF6), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm min−1. A design of experiments has been employed to investigate the influence of the inductively… 
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