Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity

@article{Chen2009HighlySH,
  title={Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity},
  author={Yu-Sheng Chen and Heng-Yuan Lee and Pang-Shiu Chen and P. Y. Gu and Chang-Sheng Chen and W. P. Lin and W. H. Liu and Y. Y. Hsu and Shyh-Shyuan Sheu and Pei-Chia Chiang and W. S. Chen and Frederick T. Chen and C. H. Lien and M.-J. Tsai},
  journal={2009 IEEE International Electron Devices Meeting (IEDM)},
  year={2009},
  pages={1-4}
}
A 30×30 nm2 HfOx resistance random access memory (RRAM) with excellent electrical performances is demonstrated for the scaling feasibility in this work. A 1 Kb one transistor and one resistor (1T1R) array with robust characteristics was also fabricated successfully. The device yield of the 1 Kb array is 100%, and the endurance for these devices can exceed 106 cycles by a pulse width of 40 ns. Two effective verification methods, which make a tight distribution of high resistance (RHIGH) and low… CONTINUE READING
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