Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection

@article{Shrivastava2009HighlyRB,
  title={Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection},
  author={Mayank Shrivastava and Jens Schneider and Maryam Shojaei Baghini and Harald Gossner and V. Ramgopal Rao},
  journal={2009 IEEE International Reliability Physics Symposium},
  year={2009},
  pages={754-759}
}
A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed. 
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