Highly-reliable TaOx reram technology using automatic forming circuit

@article{Kawai2014HighlyreliableTR,
  title={Highly-reliable TaOx reram technology using automatic forming circuit},
  author={Ken Kawai and Akifumi Kawahara and Ryutaro Yasuhara and Shunsaku Muraoka and Zhiqiang Wei and Ryotaro Azuma and Kouhei Tanabe and Kazuhiko Shimakawa},
  journal={2014 IEEE International Conference on IC Design & Technology},
  year={2014},
  pages={1-4}
}
ReRAM is increasingly being developed for applications that require higher speeds and lower voltages than flash memory. We have found TaOx to have high performance and high reliability. However one of the phenomena observed in ReRAM is that each resistance after Set and Reset varies during every cycle. To stabilize resistive switching, the key is to limit these variations in resistance. In ReRAM, a conductive filament (CF) is created by the forming pulse. Resistive switching in the CF is based… CONTINUE READING

Citations

Publications citing this paper.
Showing 1-8 of 8 extracted citations

References

Publications referenced by this paper.
Showing 1-8 of 8 references

A 16Gb R Read in 27nm Technology

  • R. Fackenthal
  • IE 339, Feb. 2014.
  • 2014
1 Excerpt

Embedded 0.27-to-1V Read Using Swing-S Self-Boost-Write-Termination

  • M.-F. Chang
  • S Papers,
  • 2014
1 Excerpt

A 130.7mm2 2- 24nm technology

  • T. Y. Liu
  • IEEE ISSC 2013.
  • 2013
2 Excerpts

Conductiv ReRAM for Long Retention with Tech

  • T. Ninomiya
  • 2012
1 Excerpt

Highly Reliable Redox Reaction Mechanism

  • Z. Wei
  • 2008.
  • 2008
1 Excerpt

Compreh Filament Characteristics and Re ReRAM

  • S. Muraoka
  • Symp. VLSI Tech., pp
1 Excerpt

Res percolation model

  • Y. M. Strelinker
  • Phys. Rev

Similar Papers

Loading similar papers…