Highly-reliable TaOx reram technology using automatic forming circuit

  title={Highly-reliable TaOx reram technology using automatic forming circuit},
  author={Ken Kawai and Akifumi Kawahara and Ryutaro Yasuhara and Shunsaku Muraoka and Zhiqiang Wei and Ryotaro Azuma and Kouhei Tanabe and Kazuhiko Shimakawa},
  journal={2014 IEEE International Conference on IC Design & Technology},
ReRAM is increasingly being developed for applications that require higher speeds and lower voltages than flash memory. We have found TaOx to have high performance and high reliability. However one of the phenomena observed in ReRAM is that each resistance after Set and Reset varies during every cycle. To stabilize resistive switching, the key is to limit these variations in resistance. In ReRAM, a conductive filament (CF) is created by the forming pulse. Resistive switching in the CF is based… CONTINUE READING


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