Highly reliable BEOL-transistor with oxygen-controlled InGaZnO and Gate/Drain offset design for high/low voltage bridging I/O operations

@article{Kaneko2011HighlyRB,
  title={Highly reliable BEOL-transistor with oxygen-controlled InGaZnO and Gate/Drain offset design for high/low voltage bridging I/O operations},
  author={K. Kaneko and N. Inoue and S. Saito and N. Furutake and H. Sunamura and J. Kawahara and M. Hane and Y. Hayashi},
  journal={2011 International Electron Devices Meeting},
  year={2011},
  pages={7.4.1-7.4.4}
}
Reliability of BEOL-transistors with a wide-gap oxide semiconductor InGaZnO (IGZO) film, integrated on LSI Cu-interconnects, is intensively discussed in terms of application to on-chip bridging I/Os between low and high voltage interactive operations (Fig. 1). Oxygen control in the thin IGZO film was found to be important to stabilize the device characteristics. A conventional IGZO tends to contain deep-level donor-states, which cause temperature and bias instabilities. The oxygen control in… Expand
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References

SHOWING 1-4 OF 4 REFERENCES
A novel BEOL transistor (BETr) with InGaZnO embedded in Cu-interconnects for on-chip high voltage I/Os in standard CMOS LSIs