Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

@article{Dal2007HighlyMF,
  title={Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography},
  author={M. J. H. van Dal and Nadine Collaert and Gerben Doornbos and Georgios Vellianitis and Giuliano Curatola and B. J. Pawlak and Ray Duffy and C. Jonville and B. Degroote and Eugenia Altamirano and E. Kunnen and M. Demand and S. Beckx and T. Vandeweyer and C{\'e}dric Delvaux and F. Leys and A. Hikavyy and Rita Rooyackers and Mohammad Rejaul Kaiser and R. G. R. Weemaes and S. Biesemans and M. Jurczak and K A Anil and Liesbeth Witters and R. J. P. Lander},
  journal={2007 IEEE Symposium on VLSI Technology},
  year={2007},
  pages={110-111}
}
We investigate scalability, performance and variability of high aspect ratio trigate FinFETs fabricated with 193 nm immersion lithography and conventional dry etch. FinFETs with fin widths down to 5nm are achieved with record aspect ratios of 13. Excellent nMOS and pMOS performance is demonstrated for narrow fins and short gates. Further improvement in nMOS performance can be achieved by eliminating access resistance that is currently attributed to poor re-crystallization of implantation damage… CONTINUE READING
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