Highly linear CMOS RF MMIC amplifier using multiple gated transistors and its Volterra series analysis

@article{Kim2001HighlyLC,
  title={Highly linear CMOS RF MMIC amplifier using multiple gated transistors and its Volterra series analysis},
  author={Bumman Kim and Jin-Su Ko and K. Lee},
  journal={2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)},
  year={2001},
  volume={1},
  pages={515-518 vol.1}
}
CMOS RF MMIC amplifiers are fabricated with linearization technique using multiple gated transistors. At 900 MHz, double and triple gated amplifiers show 2.5-4.5 dB larger figure of merit (linearity-DC power consumption), which means that only 1/2/spl sim/1/3 of DC power is needed to obtain the same OIP/sub 3/ value. Using Volterra series analysis and harmonic balance simulation, it is shown that the linearization technique with the 2nd harmonic termination can increase IIP/sub 3/ by amount of… CONTINUE READING
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