Highly efficient gallium nitride transistors designed for high power density and high output current DC-DC converters

@article{Reusch2014HighlyEG,
  title={Highly efficient gallium nitride transistors designed for high power density and high output current DC-DC converters},
  author={David B. Reusch and Johan Strydom and Alex Lidow},
  journal={2014 International Power Electronics and Application Conference and Exposition},
  year={2014},
  pages={456-461}
}
Continuing to raise the bar for power conversion performance, eGaN FETs are steadily improving performance in high power density and high current applications. In this paper we will discuss the latest developments in DC-DC converters, including a major improvement in eGaN FETs with the latest generation devices. This new family of eGaN FETs is keeping Moore's Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOSFET in high frequency… CONTINUE READING
9 Citations
15 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-9 of 9 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 15 references

Physical Limitations on Frequency and Power Parameters of Transistors

  • E. O. Johnson
  • RCA, pp. 163-177, 1965.
  • 1965
Highly Influential
7 Excerpts

GaN Transistors for Efficient Power Conversion

  • A. Lidow, J. Strydom, M. de Rooij, D. Reusch
  • Second Edition,
  • 2014
2 Excerpts

Device Selection Criteria----Based on Loss Modeling and Figure of Merit

  • Y. Ying
  • Thesis of Master of Science in Electrical…
  • 2008
1 Excerpt

Similar Papers

Loading similar papers…