Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa₁-xN nanowire based light emitting diodes.

@article{Wang2013HighlyES,
  title={Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa₁-xN nanowire based light emitting diodes.},
  author={Qi Wang and A. T. Connie and Hieu Pham Trung Nguyen and Md Golam Kibria and Songrui Zhao and S Sharif and Ishiang Shih and Zetian Mi},
  journal={Nanotechnology},
  year={2013},
  volume={24 34},
  pages={345201}
}
High crystal quality, vertically aligned AlxGa1-xN nanowire based double heterojunction light emitting diodes (LEDs) are grown on Si substrate by molecular beam epitaxy. Such AlxGa1-xN nanowires exhibit unique core-shell structures, which can significantly suppress surface nonradiative recombination. We successfully demonstrate highly efficient AlxGa1-xN nanowire array based LEDs operating at ∼340 nm. Such nanowire devices exhibit superior electrical and optical performance, including an… CONTINUE READING

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