Highly air stable passivation of graphene based field effect devices.

@article{Sagade2015HighlyAS,
  title={Highly air stable passivation of graphene based field effect devices.},
  author={A. A. Sagade and D. Neumaier and D. Schall and M. Otto and A. Pesquera and A. Centeno and A. Z. Elorza and H. Kurz},
  journal={Nanoscale},
  year={2015},
  volume={7 8},
  pages={
          3558-64
        }
}
  • A. A. Sagade, D. Neumaier, +5 authors H. Kurz
  • Published 2015
  • Medicine, Materials Science
  • Nanoscale
  • The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in… CONTINUE READING

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    References

    Publications referenced by this paper.
    SHOWING 1-10 OF 38 REFERENCES
    The rise of graphene.
    • 27,368
    • PDF
    A roadmap for graphene
    • 5,539
    • PDF
    High-speed graphene transistors with a self-aligned nanowire gate
    • 977
    • PDF
    A graphene-based broadband optical modulator
    • 2,148
    • PDF
    High-frequency, scaled graphene transistors on diamond-like carbon
    • 705
    • PDF
    Graphene: an emerging electronic material.
    • 540
    Hysteresis of electronic transport in graphene transistors.
    • 428
    • PDF