Highly air stable passivation of graphene based field effect devices.

@article{Sagade2015HighlyAS,
  title={Highly air stable passivation of graphene based field effect devices.},
  author={Abhay A. Sagade and Daniel Neumaier and Daniel Schall and Martin Otto and Amaia Pesquera and Alba Centeno and Amaia Zurutuza Elorza and H. Kurz},
  journal={Nanoscale},
  year={2015},
  volume={7 8},
  pages={
          3558-64
        }
}
The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in… 

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References

SHOWING 1-10 OF 38 REFERENCES

Solution-processable organic dielectrics for graphene electronics.

TLDR
The fabrication, at low-temperature, of solution processed graphene transistors based on carefully engineered graphene/organic dielectric interfaces show improved performance and reliability when compared with traditional SiO(2) based devices.

High on/off ratios in bilayer graphene field effect transistors realized by surface dopants.

TLDR
This paper reports on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate doping and indicates that the increased on/ off ratio is caused by the opening of a mobility gap.

High mobility flexible graphene field-effect transistors with self-healing gate dielectrics.

TLDR
Results indicate that self-aligned graphene FETs can provide remarkably improved device performance and stability for a range of applications in flexible electronics.

Large-scale graphene transistors with enhanced performance and reliability based on interface engineering by phenylsilane self-assembled monolayers.

TLDR
It is shown that phenyl-alkyl-terminated self-assembled monolayers (SAM) at the dielectric/graphene interface consistently improve the graphene device performance and reliability and charge injection from graphene to the dieLECTric/ graphene interfaces dominates the observed hysteresis behavior.

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of

Unipolar to ambipolar conversion in graphene field-effect transistors

Unlike commonly observed ambipolar graphene field-effect transistors (GFETs) that show a V-shape transfer curve with hole and electron conduction region switching at the Dirac point, all our GFETs

Understanding surfactant/graphene interactions using a graphene field effect transistor: relating molecular structure to hysteresis and carrier mobility.

TLDR
This work is the first to demonstrate the control of hysteresis, allowing it to eliminate it for sensor and device applications or to enhance it to potentially enable nonvolatile memory applications.

Selective n-type doping in graphene via the aluminium nanoparticle decoration approach

Selective and reliable n-type doping as well as tuning the Dirac point of graphene are important for the realization of high-performance complementary circuits. In this work, we present a simple but

Four-terminal magneto-transport in graphene p-n junctions created by spatially selective doping.

TLDR
It is found that chemical doping does not reduce mobility in contrast to top-gating, and spatially selective doping of graphene is demonstrated using patterned PMMA.