Highly air stable passivation of graphene based field effect devices.

@article{Sagade2015HighlyAS,
  title={Highly air stable passivation of graphene based field effect devices.},
  author={Abhay A. Sagade and Daniel Neumaier and Daniel Schall and Martin Otto and Amaia Pesquera and Alba Centeno and Amaia Zurutuza Elorza and H. Kurz},
  journal={Nanoscale},
  year={2015},
  volume={7 8},
  pages={
          3558-64
        }
}
The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in… Expand

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