Highly Sensitive Focus Monitoring on Production Wafer by Scatterometry Measurements for 90/65-nm Node Devices

@article{Kawachi2007HighlySF,
  title={Highly Sensitive Focus Monitoring on Production Wafer by Scatterometry Measurements for 90/65-nm Node Devices},
  author={T.. Kawachi and H.. Fudo and Y.. Iwata and S.. Matsumoto and H.. Sasazawa and T.. Mori},
  journal={IEEE Transactions on Semiconductor Manufacturing},
  year={2007},
  volume={20},
  pages={222-231}
}
RENESAS factories are starting to use scatterometry for inline focus measurement. This paper presents the development of the method used for nondestructive, high accuracy, and high-speed focus measurement on production wafers. Focus change results in a subtle variation of the photoresist shape, and this phenomenon is parameterized by using a new eight-layer model. Partial least squares regression methods are used to calculate focus from scatterometry measurement results. The measurement error… CONTINUE READING

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