Highly Reliable Thin MIM Capacitor on Metal (CoM) Structure with Vertical Scalability for Analog/RF Applications

@article{Inoue2007HighlyRT,
  title={Highly Reliable Thin MIM Capacitor on Metal (CoM) Structure with Vertical Scalability for Analog/RF Applications},
  author={Naoya Inoue and Ikuo Kume and Jun Kawahara and N. Furutake and Tatsuya Toda and Kohei Matsui and Masayuki Furumiya and Takao Iwaki and S. Shida and Yoshihiro Hayashi},
  journal={2007 IEEE International Electron Devices Meeting},
  year={2007},
  pages={989-992}
}
Highly reliable thin MIM capacitor on metal (CoM) structure has been developed to be fitted in scaled-down Cu BEOLs without any change in the interconnect structure. The 100 nm-thin CoM structure, covering the opened area in the barrier dielectric (SiCN-cap) on the Cu interconnects, guarantees vertical scalability in the shrinking interconnect layers. High reliability of 10-year TDDB lifetime is achieved for thin SiN with 6.3 fF/mum2 by the rounded shoulder and the flattened bottom surface of… CONTINUE READING