Highly Efficient Monolithic Class E SiGe Power Amplifier Design at 900 and 2400 MHz

@article{Lie2009HighlyEM,
  title={Highly Efficient Monolithic Class E SiGe Power Amplifier Design at 900 and 2400 MHz},
  author={Donald Y. C. Lie and Jerry Lopez and Jeremy D. Popp and Jason F. Rowland and Guogong Wang and Guoxuan Qin and Zhenqiang Ma},
  journal={IEEE Transactions on Circuits and Systems I: Regular Papers},
  year={2009},
  volume={56},
  pages={1455-1466}
}
This paper discusses the impact of transistor performance and operating frequency on the design of monolithic highly efficient RF SiGe power amplifiers (PAs) using on-chip lump-element passives and/or bondwires to approximate the class E switching conditions. Single-stage SiGe PAs were designed and fabricated using both high-breakdown and high- fT devices targeting for the highest power-added-efficiency (PAE). The PAs designed using high-breakdown devices with on-chip tank inductors exhibit… CONTINUE READING

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