Highly Efficient InP/GaAsSb DHBTs With 62% Power-Added Efficiency at 40 GHz

@article{Teppati2011HighlyEI,
  title={Highly Efficient InP/GaAsSb DHBTs With 62% Power-Added Efficiency at 40 GHz},
  author={Valeria Teppati and Yuping Zeng and Olivier Ostinelli and C. R. Bolognesi},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={886-888}
}
We report the large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with fT and fMAX cutoff frequencies as high as 380 and 320 GHz, respectively. Measurements were performed at 40 GHz in a passive load-pull system to characterize the output power and power-added-efficiency (PAE) performance. A PAE of 60% with an output power of 10 dBm (corresponding to power densities of approximately 870 mW/mm and 1.45 mW/μm2) was achieved in class AB operation… CONTINUE READING