High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis.

@article{Joung2010HighYF,
  title={High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis.},
  author={Daeha Joung and Anindarupa Chunder and Lei Zhai and Saiful I. Khondaker},
  journal={Nanotechnology},
  year={2010},
  volume={21 16},
  pages={
          165202
        }
}
We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets. The RGO sheets suspended in water were assembled between prefabricated gold source and drain electrodes using ac dielectrophoresis. With the application of a backgate voltage, 60% of the devices showed p-type FET behavior, while the remaining 40% showed ambipolar behavior. After mild thermal annealing at 200 degrees C, all ambipolar RGO FET remained ambipolar with… Expand

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