High voltage subnanosecond silicon carbide opening switch

@article{Ivanov2016HighVS,
  title={High voltage subnanosecond silicon carbide opening switch},
  author={Boris V. Ivanov and A. A. Smirnov and Sergey A. Shevchenko and Alexey V. Afanasyev and Vladimir A. Ilyin},
  journal={2016 57th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)},
  year={2016},
  pages={1-4}
}
We discuss the results of the design and examination of high-voltage superfast opening switches - the drift step recovery diodes (DSRD) based on silicon carbide. The fabricated diodes have p+-p-n+ structure with relatively thick low-doped base region, which allows switching voltage of 1.8 kV in less than 500 ps. With 4H-SiC DSRD operating as an opening switch in an ultrashort pulse generator circuit in pulse repetition mode, maximal pulse repetition frequency is 500 kHz in continuous operation… CONTINUE READING