High-transconductance n-type Si/SiGe modulation-doped field-effect transistors

@article{Ismail1992HightransconductanceNS,
  title={High-transconductance n-type Si/SiGe modulation-doped field-effect transistors},
  author={Khalid Ismail and Bengt J. Meyerson and Stephen Rishton and Jack Chu and Sydney B. Nelson and Joseph Nocera},
  journal={IEEE Electron Device Letters},
  year={1992},
  volume={13},
  pages={229-231}
}
The authors report on the fabrication and the resultant device characteristics of the first 0.25- mu m gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm/sup 2//V-s and 2.5*10/sup 12/ (1.5*10/sup 12/) cm/sup -2/ at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS… CONTINUE READING

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References

Publications referenced by this paper.
SHOWING 1-8 OF 8 REFERENCES

Performance of a quarter - micrometer - gate ballistic electron HEMT

  • M. Kosugi Awano, T. Mimura
  • Phys . Rev . Lett .
  • 1991

A new field effect transistor with selectivity doped GaAs / n - AIGaAs heterojunc - tions

  • S. Hiyamizu Mimura, T. Fujii, K. Nanbu
  • IEEE Trans . Electron Devices
  • 1980

Electron mobilities in modulation - doped semiconductor heterostructure superlattices

  • A. C. Gossard, W. Wiegmann
  • 1978

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