High-throughput NGL electron-beam direct-write lithography system

  title={High-throughput NGL electron-beam direct-write lithography system},
  author={N. William Parker and Alan D. Brodie and John H. McCoy},
  booktitle={Advanced Lithography},
Electron beam lithography systems have historically had low throughput. The only practical solution to this limitation is an approach using many beams writing simultaneously. For single-column multi-beam systems, including projection optics (SCALPELR and PREVAIL) and blanked aperture arrays, throughput and resolution are limited by space-charge effects. Multibeam micro-column (one beam per column) systems are limited by the need for low voltage operation, electrical connection density and… Expand
Electron optical column for a multicolumn, multibeam direct-write electron beam lithography system
Electron beam direct-write lithography systems are capable of meeting the resolution requirements of all future ITRS nodes and have a significant cost of ownership advantage over masked technologies,Expand
Multiaxis and multibeam technology for high throughput maskless E-beam lithography
The authors have devised a new maskless E-beam lithography method which can achieve a throughput of 10 wph which the authors are calling a “multiaxis programmable shaped beam” (multiaxis PSB). It isExpand
Overview of Modern Lithography Techniques and a MEMS-Based Approach to High Throughput Rate Electron Beam Lithography
The ever-increasing drive to fabricate Integrated Circuits (ICs) with smaller feature sizes is stretching the capabilities of today’s optical lithography methods. Current research is focused onExpand
Single-spot e-beam lithography for defining large arrays of nano-holes
Efficient nanoscale patterning of large areas is required for sub-wavelength optics. Here we use the single-spot exposure strategy, where electron beam lithography (EBL) with a focused Gaussian beamExpand
High throughput defect detection with multiple parallel electron beams
A new concept for high throughput defect detection with multiple parallel electron beams is described. As many as 30 000 beams can be placed on a footprint of a in.2, each beam having its ownExpand
Advances in microchannel amplifiers for maskless lithography
Arradiance is developing a novel approach for achieving the high brightness and intra-field beam uniformity required for volume production electron beam maskless lithography. The goal is to utilizeExpand
Process optimization of parameterized single shot method for a rapid production of photon sireve with direct write lithography
Abstract Photon sieves are promising elements for high-resolution optics. Fabrication of photon sieves is a raising topic of microscale optic fabrication. In order to fabricate photon sieves, manyExpand
Optimization of LOPA-based direct laser writing technique for fabrication of submicrometric polymer two- and three-dimensional structures
We demonstrate a novel and very simple method allowing very easy flexible fabrication of 2D and 3D submicrometric structures. By using a photosensitive polymer (SU8) possessing an ultralow one-photonExpand
Post-Layout Perturbation towards Stitch Friendly Layout for Multiple E-Beam Lithography
This work minimizes stitch unfriendly patterns at post-layout stage based on perturbation of wire segments by formulating it as a maximum matching problem, thereby making an already optimized design more MEBL friendly without increasing the wirelength. Expand
Use of microfabricated cold field emitters in sub-100 nm maskless lithography
We propose a multicolumn and multibeam electron beam direct write lithography scheme using arrays of cold cathode emitters as the electron source. The conceptual design and the requirements for theExpand


Arrayed miniature electron beam columns for high throughput sub-100 nm lithography
In recent years, considerable progress has been made on an approach based on a novel concept which combines scanning tunneling microscope, microfabricated lenses, and field emission technologies toExpand
Distributed, multiple variable shaped electron beam column for high throughput maskless lithography
The ultimate resolution obtainable with focused electron beams is, for practical purposes in lithography, unlimited. Existing e-beam lithography systems are too slow to be practical for high volumeExpand
Electron‐beam direct writing system EX‐8D employing character projection exposure method
An electron‐beam direct writing system which adopts character projection methods in addition to conventional variable‐shaped beam methods, has been constructed for 0.15 μm class ultra‐large scaleExpand
Multielectron beam blanking aperture array system SYNAPSE‐2000
A blanking aperture array (BAA) has 1024, 25‐μm‐square apertures and blanking electrodes on a 20‐μm‐thick Si membrane with a total aperture ratio of 1/6. These apertures are irradiated with anExpand
Negative chemically amplified resist characterization for direct write and SCALPEL nanolithography
Despite the common link of using high energy electrons as exposure probes in direct write and SCALPEL lithography, the imaging systems in both are different. The question arises then if an optimalExpand
Variable spot shaping for electron‐beam lithography
Spot size and shape can be changed rapidly, without loss of resolution and current density, by use of the probe‐forming electron‐beam system described here. The variable‐shaped spot (VSS) method isExpand
Space-charge-induced aberrations
The effect of Coulomb interactions in electron-beam lithography systems are usually described in terms of the blur induced by stochastic electron–electron interactions. Here, we show both by anExpand
Prospects for charged particle lithography as a manufacturing technology
Abstract Both electron beams and ion beams have unlimited resolution as far as semiconductor manufacturing is concerned. Both have serious throughput limitations because of the difficulties ofExpand
Patterned negative affinity photocathodes for maskless electron beam lithography,
  • J. Vac. Sci. Technol. B l6(6),pp.3l92-3l96,
  • 1998
Schneider et a ! . " Patterned negative affinity photocathodes for maskless electron beam lithography
  • J . Vac . Sci . Technol . B l
  • 1998