High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy

@inproceedings{Eriguchi2008HightemperatureGO,
  title={High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy},
  author={Kenichi Eriguchi and Takako Hiratsuka and Hisashi Murakami and Yoshinao Kumagai and Akinori Koukitu},
  year={2008}
}
Abstract High-temperature growth of thick AlN layers was performed by solid source halide vapor-phase epitaxy (HVPE) with local heating system. It was found that crystalline quality of AlN layers grown on sapphire (0 0 0 1) substrates improved with increase of growth temperature until 1500 °C. Degradation of crystalline quality occurred over 1550 °C, which is thought to be due to the decomposition of AlN crystal or sapphire substrate during the epitaxial growth. The full-width at half-maximum… CONTINUE READING