High surge current ruggedness of 5kV class 4H-SiC SiCGT

@article{Ogata2010HighSC,
  title={High surge current ruggedness of 5kV class 4H-SiC SiCGT},
  author={Syuuji Ogata and Katsunori Asano and Yoshihiro Sugawara and Atsushi Tanaka and Y. Miyanagi and Koji Nakayama and Toru Izumi and Toshihiko Hayashi and Munenori Nishimura},
  journal={2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)},
  year={2010},
  pages={369-372}
}
The ruggedness of SiCGT (SiC Commutated Gate Turn-off Thyristor) was investigated. The SiCGT was confirmed to operate at over 1200oC, a higher temperature than Si device's destruction temperature. The SiCGT endured a large current of over 2000A (2470A/cm2) per one chip. Positive temperature coefficient resistor behavior could be found during the destruction… CONTINUE READING