High-speed electro-absorption modulator based on sige HBT

In this paper, we propose a silicon electro-absorption modulator (EAM) that is based on the NPN SiGe Heterojunction Bipolar Transistor (HBT). The SiGe HBT EAM is a carrier-injection type device in which electrons are injected from the emitter to the base and the collector region. Compared to other silicon-based injection-type modulators, the HBT optical… CONTINUE READING