High speed carrier-depletion modulators with 1.4V-cm V(pi)L integrated on 0.25microm silicon-on-insulator waveguides.

@article{Feng2010HighSC,
  title={High speed carrier-depletion modulators with 1.4V-cm V(pi)L integrated on 0.25microm silicon-on-insulator waveguides.},
  author={Ning-ning Feng and Shirong Liao and Dazeng Feng and Po Dong and Dawei Zheng and Hong Liang and Roshanak Shafiiha and Guoliang Li and John E. Cunningham and Ashok V. Krishnamoorthy and Mehdi Asghari},
  journal={Optics express},
  year={2010},
  volume={18 8},
  pages={7994-9}
}
We demonstrate a very efficient high speed silicon modulator with an ultralow pi-phase-shift voltage-length product V(pi)L = 1.4V-cm. The device is based on a Mach-Zehnder interferometer (MZI) fabricated using 0.25microm thick silicon-on-insulator (SOI) waveguide with offset lateral PN junctions. Optimal carrier-depletion induced index change has been achieved through the optimization of the overlap region of carriers and photons. The 3dB bandwidth of a typical 1mm long device was measured to… CONTINUE READING
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