High-speed and reliable domain wall motion device: Material design for embedded memory and logic application

@article{Fukami2012HighspeedAR,
  title={High-speed and reliable domain wall motion device: Material design for embedded memory and logic application},
  author={Shunsuke Fukami and Michihiko Yamanouchi and Teruhide Koyama and Kayo Ueda and Yoshiyuki Yoshimura and K.-J Kim and Daichi Chiba and H.. Honjo and Noboru Sakimura and Ryusuke Nebashi and Yoshihisa Kato and Yukihide Tsuji and Ayuka Morioka and Keizo Kinoshita and Sadahiko Miura and T.. Suzuki and Hiroyasu Tanigawa and Shoji Ikeda and Tadahiko Sugibayashi and Naoki Kasai and Teruo Ono and Hideo Ohno},
  journal={2012 Symposium on VLSI Technology (VLSIT)},
  year={2012},
  pages={61-62}
}
High-speed capability and excellent reliability of a magnetic domain wall (DW) motion device required for embedded memory and logic-in-memory applications were achieved by optimizing the film stack structure of Co/Ni wire. Low-current with high-speed writing, high heat resistance, low error rate, wide operation range for temperature and magnetic field, high retention, and high endurance features were confirmed. 
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