High-speed and high-power InGaAs/InP photodiode

@article{Yang2011HighspeedAH,
  title={High-speed and high-power InGaAs/InP photodiode},
  author={Hua Yang and Chris Ll. M. Daunt and Kohsin Lee and Wei Han and Farzan Guy and Brian Corbett},
  journal={IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials},
  year={2011},
  pages={1-4}
}
The photodiode (PD) is a key component in optical transmission and optical measurement systems. In this paper, we present an InP-based InGaAs Uni-traveling Carrier (UTC) PD designed and fabricated for high speed and high power applications. A UTC PD with a 40µ×5°m wave guide shows a 3dB bandwith up to 40GHz and photocurrents of up to 10mA without saturation in our measurement range. 

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