High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

@article{Xiao2013HighspeedLS,
  title={High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.},
  author={Xi Xiao and Hao Xu and Xianyao Li and Zhiyong Li and Tao Chu and Yude Yu and Jinzhong Yu},
  journal={Optics express},
  year={2013},
  volume={21 4},
  pages={4116-25}
}
We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a VπLπ < 2 V·cm were achieved in an MZM with a 750 μm-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed… CONTINUE READING

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