High sensitive THz faraday rotation measurements in doped semiconductors

@article{Ikebe2007HighST,
  title={High sensitive THz faraday rotation measurements in doped semiconductors},
  author={Yohei Ikebe and Ryo Shimano},
  journal={2007 Quantum Electronics and Laser Science Conference},
  year={2007},
  pages={1-2}
}
We present a highly sensitive terahertz Faraday measurement scheme with the detection sensitivity of Faraday rotation as small as 1 mrad. The scheme was applied to n-doped Si to examine the carrier density and mobility.