High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate

@article{Kim2007HighresolutionTE,
  title={High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate},
  author={Y. Kim and J. Lee and Young-Woock Noh and M. Kim and J. Oh},
  journal={Applied Physics Letters},
  year={2007},
  volume={90},
  pages={241915}
}
  • Y. Kim, J. Lee, +2 authors J. Oh
  • Published 2007
  • Physics
  • Applied Physics Letters
  • The initial growth behaviors of GaSb on a GaAs substrate were studied using a high-resolution electron microscope (HRTEM). Four types of GaSb islands were observed by HRTEM. HRTEM micrographs showed that strain relaxation mechanisms were different in the four types of islands. Although 90° misfit dislocations relieve misfit strain in the islands, additional mechanisms are required to relax the remaining strain. The existence of elastic deformation near the surface related to dislocations and… CONTINUE READING
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    References

    SHOWING 1-10 OF 17 REFERENCES
    RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS
    • 272