• DOI:10.1021/JP061623N
• Corpus ID: 46088858

High-resolution X-ray photoelectron spectroscopy of chlorine-terminated GaAs(111)A surfaces.

@article{Traub2006HighresolutionXP,
  title={High-resolution X-ray photoelectron spectroscopy of chlorine-terminated GaAs(111)A surfaces.},
  author={Matthew C. Traub and Julie S. Biteen and David J. Michalak and Lauren J. Webb and Bruce S. Brunschwig and Nathan S. Lewis},
  journal={The journal of physical chemistry. B},
  year={2006},
  volume={110 32},
  pages={
          15641-4
        }
}

• Matthew C. Traub, J. Biteen, +3 authors N. Lewis
• Published 17 August 2006
• Physics
• The journal of physical chemistry. B

Oxide-terminated and Cl-terminated GaAs(111)A surfaces have been characterized in the As and Ga 3d regions by high-resolution, soft X-ray photoelectron spectroscopy. The Cl-terminated surface, formed by treatment with 6 M HCl(aq), showed no detectable As oxides or As(0) in the As 3d region. The Ga 3d spectrum of the Cl-terminated surface showed a broad, intense signal at 19.4 eV and a smaller signal at 21.7 eV. The Ga 3d peaks were fitted using three species, one representing bulk GaAs and the others representing two chemical species on the surface. The large peak was well-fitted by the bulk GaAs emission and by a second doublet, assigned to surface Ga atoms bonded to Cl, that was shifted by 0.34 eV from the bulk GaAs 3d emission. The smaller peak, shifted by 2.3 eV in binding energy relative to the bulk GaAs Ga 3d signal, is assigned to Ga(OH)3. The data confirm that wet chemical etching allows for the formation of well-defined, Cl-terminated GaAs(111)A surfaces free of detectable elemental As, that can provide a starting point for further functionalization of GaAs.