High-resolution IC inspection technique

@inproceedings{Ippolito2001HighresolutionII,
  title={High-resolution IC inspection technique},
  author={Stephen B. Ippolito and Anna K. Swan and Bennett B. Goldberg and M. Selim Unlu},
  booktitle={SPIE LASE},
  year={2001}
}
  • Stephen B. Ippolito, Anna K. Swan, +1 author M. Selim Unlu
  • Published in SPIE LASE 2001
  • DOI:10.1117/12.429355
We demonstrate a through the substrate, numerical aperture increasing lens (NAIL) technique for high-resolution inspection of silicon devices. We experimentally demonstrate a resolution of 0.2 μm, with the ultimate diffraction limit of 0.14 μm. Absorption limits inspection in silicon to wavelengths greater than 1 μm, placing an ultimate limit of 0.5 μm resolution on standard subsurface microscopy techniques. Our numerical aperture increasing lens reduces this limit to 0.14 μm, a significant… CONTINUE READING
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