High repetition-rate sub-picosecond source of fibre-amplified vertical-external-cavity surface-emitting semiconductor laser pulses

Abstract

In this work we used a V-cavity VECSEL with InGaAs quantum-well-based gain and semiconductor saturable absorber mirror structures as described in S. Hoogland et al.(2005): an overall cavity length of 25 mm conferred a fundamental pulse repetition frequency of 5.9908 GHz, and the VECSEL emitted 1-ps pulses in a stable passively mode-locked train with 40 mW… (More)

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