High reliability level on single-mode 980 nm-1060 nm diode lasers for telecommunication and industrial applications

@inproceedings{Casteele2008HighRL,
  title={High reliability level on single-mode 980 nm-1060 nm diode lasers for telecommunication and industrial applications},
  author={J. Van de Casteele and M. Bettiati and F. Laruelle and V. Cargemel and P. Pagnod-Rossiaux and P. R. Garabedian and L D Raymond and Dominique Laffitte and S. Fromy and D. Chambonnet and J. P. Hirtz},
  year={2008}
}
We demonstrate very high reliability level on 980-1060nm high-power single-mode lasers through multi-cell tests. First, we show how our chip design and technology enables high reliability levels. Then, we aged 758 devices during 9500 hours among 6 cells with high current (0.8A-1.2A) and high submount temperature (65°C-105°C) for the reliability demonstration. Sudden catastrophic failure is the main degradation mechanism observed. A statistical failure rate model gives an Arrhenius thermal… CONTINUE READING

References

Publications referenced by this paper.
Showing 1-4 of 4 references

High Brightness Single-Mode 1060-nm Diode Lasers for Demanding Industrial Applications

2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference • 2007

Capella, "Very high power operation of 980 nm single-mode InGaAs/AlGaAs pump lasers

M. Bettiati, C. Starck, +9 authors R-M
SPIE Proceedings Vol.6104, • 2006
View 3 Excerpts

Fie, J-C Bertreux, “Design and Manufacture of 980 nm Ridge Lasers for High Power Bragg Stabilised Pump Modules

C. Starck, M. Bettiati, +11 authors J-P
Proceedings of the European Conference on Optical Communications • 2004
View 1 Excerpt

Design and Manufacture of 980 nm Ridge Lasers for High Power Bragg Stabilised Pump Modules

P. Pagnod, P. Garabedian, +15 authors J-C Bertreux
-1

Similar Papers

Loading similar papers…