High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility

@article{Nogami2010HighR3,
  title={High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility},
  author={Takeshi Nogami and Tibor Bolom and Andrew H. Simon and B-Y. Kim and C-K. Hu and Kazuyuki Tsumura and A. Madan and Frieder H. Baumann and Yunyu Wang and Philip L. Flaitz and Christopher J Parks and Priscilla Dehaven and Randall Scott Davis and Mary Zaitz and Breanna Lawrence and Ron A. Murphy and Leo Tai and Steven E. Molis and S-H. Rhee and Takamasa Nagoya-shi Usui and C. Cabral and Joseph S. Maniscalco and Larry A. Clevenger and Bing Li and Cato Christiansen and Fu Chen and Tzu Chieh Lee and Joyce Schmatz and Hosadurga Shobha and Fuyuki Ito and Tompkins Ryan and Son Lan Hung Nguyen and Donald F. Canaperi and J. C. Arnold and Sam Choi and S. A. Cohen and Eric G. Liniger and H-C. Chen and S-T. Chen and Tuan Anh Vo and John Paul Kelly and Oscar van der Straten and Christopher J. Penny and Griselda Bonilla and Paul J. Kozlowski and Terry A. Spooner and D. Edelstein},
  journal={2010 International Electron Devices Meeting},
  year={2010},
  pages={33.5.1-33.5.4}
}
A 32 nm BEOL with PVD CuMn seedlayer and conventional PVD-TaN/Ta liner was fully characterized by fundamental, integrated, and reliability methods. CuMn was confirmed to have fundamental advantages over CuAl, such as higher electromigration (EM) reliability for the same Cu line resistance (R). Both low R and high reliability (EM, SM, and TDDB) were achieved. Improved extendibility of CuMn relative to CuAl was also supported by studies of alloy interactions with advanced liner materials Ru and… CONTINUE READING

Citations

Publications citing this paper.
SHOWING 1-3 OF 3 CITATIONS

Electromigration-resistance enhancement with CoWP or CuMn for advanced Cu interconnects

  • 2011 International Reliability Physics Symposium
  • 2011
VIEW 4 EXCERPTS
CITES BACKGROUND
HIGHLY INFLUENCED

Geometry, kinetics, and short length effects of electromigration in Mn doped Cu interconnects at the 32nm technology node

  • 2012 IEEE International Reliability Physics Symposium (IRPS)
  • 2012
VIEW 2 EXCERPTS
CITES BACKGROUND