High-quality ultra-flat BiSbTe3 films grown by MBE

@inproceedings{Liu2015HighqualityUB,
  title={High-quality ultra-flat BiSbTe3 films grown by MBE},
  author={Wei An Liu and L. John Endicott and Vladimir A. Stoica and Hang Chi and Roger Clarke and Ctirad Uher},
  year={2015}
}
Abstract We report on the growth of high-quality topological insulator BiSbTe 3 films (thickness of 30 nm) on sapphire (0001) substrates through the molecular beam epitaxy (MBE) technique and discuss the possibility to improve the film quality and surface flatness through annealing. Instead of using elemental Sb, the choice of Sb 2 Te 3 as well as the use of solid sources of Bi and Te assures excellent stability during thermal evaporation enabling layer-by-layer epitaxial growth of high-quality… CONTINUE READING

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SHOWING 1-10 OF 27 REFERENCES

Thin film dilute ferromagnetic semiconductors Sb2 xCrxTe3 with a Curie temperature up to 190 K

Z. H. Zhou, Y. J. Chien, C. Uher
  • Phys. Rev. B 74 (2006) 224418. Fig. 7. (a) Magneto-resistance (MR) of the BiSbTe3 film grown at 500 K. (b) MR of the annealed BiSbTe3 films. W. Liu et al. / Journal of Crystal Growth 410
  • 2015
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