High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

@article{Paskova2006HighqualityBA,
  title={High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire},
  author={T. Paskova and R. Kr{\"o}ger and S. Figge and D. Hommel and V. Darakchieva and B. Monemar and E. Preble and A. Hanser and N. M. Williams and M. Tutor},
  journal={Applied Physics Letters},
  year={2006},
  volume={89},
  pages={051914}
}
  • T. Paskova, R. Kröger, +7 authors M. Tutor
  • Published 2006
  • Physics
  • Applied Physics Letters
  • Thick GaN bars with [1120] orientation have been sliced from GaN boules grown on freestanding films by hydride vapor phase epitaxy (HVPE) in the [0001] direction. High-resolution x-ray diffraction and transmission electron microscopy have been used to study the structural quality and defect distribution in the material in comparison to heteroepitaxially grown thick HVPE-GaN films grown in the [1120] direction on (1102)-plane sapphire. It is demonstrated that while the heteroepitaxial material… CONTINUE READING
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