High-power ultralow-chirp 10-Gb/s electroabsorption modulator integrated laser with ultrashort photocarrier lifetime


A high-power, ultralow-chirp electroabsorption modulator (EAM) integrated with a distributed-feedback laser diode (EML) having ultrashort lifetime of photogenerated holes in the EAM quantum-well (QW) structure is reported for the first time. A shallow QW structure having a small valence band offset to enhance the sweepout of photogenerated holes was… (More)

9 Figures and Tables


  • Presentations referencing similar topics