High-power, very low threshold, GaImnP/AIGaInP visble-diode lasers

Abstract

Visible light (665 nm) laser diodes employing a strained-layer, single quantum well, graded index separate confinement heterostructure were fabricated from epitaxial wafers grown by metalorganic chemical vapor deposition. Threshold current densities for single element, uncoated, broad-area diodes operated cw as low as 425 A/cm’, cw power outputs of 340 mW… (More)

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